Browsing by Author "Afrailov, Muhitdin Ahmetoğlu"

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    Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si
    (Elsevier, 2019-06-20) Kirezli, B.; Gücüyener, İsmet; Kara, A.; Kaplan, H. K.; Afrailov, Muhitdin Ahmetoğlu; Kirezli, B.; GÜCÜYENER, İSMET; KARA, ALİ; KAPLAN, HÜSEYİN KAAN; Afrailov, Muhitdin Ahmetoglu; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.; Bursa Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü.; 0000-0003-2457-6314; 0000-0002-4144-5837; 0000-0002-9555-6903; KDM-6805-2024; A-4861-2018; AAG-6271-2019; GWV-7916-2022; FEP-7816-2022
    Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.
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    Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions
    (Elsevier, 2004-05) Afrailov, Muhitdin Ahmetoğlu; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 55153359100
    Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias.
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    Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m
    (Elsevier Science, 2012-05-31) Afrailov, Muhitdin Ahmetoğlu; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 55153359100
    The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
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    Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6-3.5 μm
    (Elsevier, 2010-01) Afrailov, Muhitdin Ahmetoğlu; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 55153359100
    The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. At the difference frequency, C-V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. it is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power-voltage sensitivity in the temperature range 77-300 K.
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    A ZnS-Si hetero-junction photodiode for short wavelength photon detection
    (Elsevier, 2003-09-01) Tapan, İlhan; Afrailov, Muhitdin Ahmetoğlu; Uludağ Universitesi/ Fen Edebiyat Fakültesi/Fizik Bölümü.; 8905787000; 55153359100
    In this work, we have developed a Zinc sulfide Silicon (ZnS-Si) hetero-junction photodiode structure that has very high quantum efficiency for photons of wavelength in the region from 340 to 800 nm. This structure is suitable for scintillating crystals used in particle physics experiments, emit light in the wavelength region of 400-550 nm. The signal generation process has been performed in a well-defined device geometry by a Monte Carlo simulation code written in Fortran. Based on this work, we offer a new photodiode structure for scintillation lights detection.