Browsing by Author "Kaplan, H. K."

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    Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si
    (Elsevier, 2019-06-20) Kirezli, B.; Gücüyener, İsmet; Kara, A.; Kaplan, H. K.; Afrailov, Muhitdin Ahmetoğlu; Kirezli, B.; GÜCÜYENER, İSMET; KARA, ALİ; KAPLAN, HÜSEYİN KAAN; Afrailov, Muhitdin Ahmetoglu; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.; Bursa Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü.; 0000-0003-2457-6314; 0000-0002-4144-5837; 0000-0002-9555-6903; KDM-6805-2024; A-4861-2018; AAG-6271-2019; GWV-7916-2022; FEP-7816-2022
    Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.
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    Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method
    (Elsevier, 2018-05-24) Kaplan, H. K.; Akay, Sertan Kemal; Ahmetoğlu, Muhitdin; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 0000-0002-4144-5837; GWV-7916-2022; R-7260-2016; 57194768599; 24801954600; 16021109400
    ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.