Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode

Ahmetoğlu, Muhittin; Küçür, Banu; Andreev, I. A.; Kunitsyna, E. V.; Mikhailova, M. P.; Yakovlev, Y. P.

Publication:
Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode

dc.contributor.author	Ahmetoğlu, Muhittin
dc.contributor.author	Küçür, Banu
dc.contributor.author	Andreev, I. A.
dc.contributor.author	Kunitsyna, E. V.
dc.contributor.author	Mikhailova, M. P.
dc.contributor.author	Yakovlev, Y. P.
dc.contributor.buuauthor	AHMETOĞLU, MUHİTDİN
dc.contributor.buuauthor	Küçür, Banu
dc.contributor.department	Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.researcherid	CZA-5782-2022
dc.contributor.researcherid	KDM-6805-2024
dc.date.accessioned	2024-08-13T05:42:29Z
dc.date.available	2024-08-13T05:42:29Z
dc.date.issued	2015-04-01
dc.description	Bu çalışma, 24-27, Nisan 2014 tarihlerinde Fethiye[Türkiye]’de düzenlenen 4. International Congress in Advances in Applied Physics and Materials Science (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstract	In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
dc.identifier.eissn	1898-794X
dc.identifier.endpage	1009
dc.identifier.issn	0587-4246
dc.identifier.issue	4
dc.identifier.startpage	1007
dc.identifier.uri	http://przyrbwn.icm.edu.pl/APP/PDF/127/a127z4p038.pdf
dc.identifier.uri	https://hdl.handle.net/11452/43944
dc.identifier.volume	127
dc.identifier.wos	000357937100039
dc.indexed.wos	WOS.SCI
dc.indexed.wos	WOS.ISTP
dc.language.iso	en
dc.publisher	Polish Acad Sciences Inst Physics
dc.relation.journal	Acta Physica Polonica A
dc.relation.publicationcategory	Konferans Öğesi - Uluslararası
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Tpv
dc.subject	Science & technology
dc.subject	Physical sciences
dc.subject	Physics, multidisciplinary
dc.subject	Physics
dc.title	Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode
dc.type	Article
dc.type	Proceedings Paper
dspace.entity.type	Publication
relation.isAuthorOfPublication	243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery	243af714-a388-4a64-b1dd-ce4024cdf289