Publication:
N+-GaSb/n o -GainAsSb/P +-GaSb type II heterojunction photodiodes with low radiation damage

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dc.contributor.authorAhmetoglu (Afrailov), Muhittin
dc.contributor.authorKirezli, Burcu
dc.contributor.authorKaynak, Gökay
dc.contributor.authorAndreev, I. A.
dc.contributor.authorKunitsyna, E., V
dc.contributor.authorMikhailova, M. P.
dc.contributor.authorYakovlev, Yu P.
dc.contributor.buuauthorAHMETOĞLU, MUHİTDİN
dc.contributor.buuauthorKirezli, Burcu
dc.contributor.buuauthorKaynak, Gökay
dc.contributor.departmentBursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
dc.contributor.orcid0000-0002-9555-6903
dc.contributor.researcheridKDM-6805-2024
dc.contributor.researcheridFEP-7816-2022
dc.contributor.researcheridCYZ-0032-2022
dc.date.accessioned2024-07-26T05:02:39Z
dc.date.available2024-07-26T05:02:39Z
dc.date.issued2018-09-01
dc.description.abstractThe electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.
dc.identifier.eissn2065-3824
dc.identifier.endpage520
dc.identifier.issn1842-6573
dc.identifier.issue9-10
dc.identifier.startpage517
dc.identifier.urihttps://hdl.handle.net/11452/43451
dc.identifier.volume12
dc.identifier.wos000455346600005
dc.indexed.wosWOS.SCI
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.bapQUAP(F)-2016/11
dc.relation.journalOptoelectronics and Advanced Materials-rapid Communications
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDark current
dc.subjectCapacitance and voltage characteristics
dc.subjectPhotosensitivity
dc.subjectGamma irradiation
dc.subjectScience & technology
dc.subjectTechnology
dc.subjectPhysical sciences
dc.subjectMaterials science, multidisciplinary
dc.subjectOptics
dc.subjectMaterials science
dc.titleN+-GaSb/n o -GainAsSb/P +-GaSb type II heterojunction photodiodes with low radiation damage
dc.typeArticle
dspace.entity.typePublication
relation.isAuthorOfPublication243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery243af714-a388-4a64-b1dd-ce4024cdf289

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